Sérgio Magalhães

Pos-Doctoral Researcher

 

Contacts

Rua do Campo Alegre, 687

Porto , Portugal 4169-007

Email: smagalhaes@fc.up.pt

Work: (+351) 220 402 340/337

Education:

Education:
Ph.D., Physics, University of Aveiro, Portugal, March 2013. Title of PhD Thesis: Characterization and modification of III-nitride quantum heterostructures

M.Sc., Materials and Science Engineering, Instituto Superior Técnico, Lisbon, Portugal 2008. Title of M. Sc. Thesis: Characterization of GaN and Ge quantum dots on AlN and Si heterostrutures.

Diploma, Physics, University of Aveiro, Portugal, 2004. Title of diploma Thesis: Implantation of Ar on GaAs/AlAs superlattices

 

Biography:

S. Magalhães finished his PhD in March 2013 in University of Aveiro, Portugal and Instituto Tecnológico and Nuclear, Instituto Superior Técnico, Lisbon, Portugal. Interested in characterization with X-ray and ion beam techniques of group III-nitride semiconductors and quantum dots heteroestrutures.

 

Relevant research articles:

- M. Fialho, K. Lorenz, S. Magalhães, J. Rodrigues, N. F. Santos, T. Monteiro, E. Alves, “Lattice site location and luminescence of Al1-xGa1-xN alloys doped with thulium ions”, Nucl. Instr. and Meth. in Phys. Res. B307 495 (2013)
- S. Magalhães, N. P. Barradas, E. Alves, I. M. Watson, K. Lorenz, “High precision determination of the InN content of Al1-xInxN thin films by Rutherford backscattering spectrometry”, Nucl. Instr. and Meth. in Phys. Res. B273 105-108 (2012)
- S. Magalhães, M. Peres, V. Fellmann, B. Daudin, A. J. Neves, E. Alves, T. Monteiro, K. Lorenz, “Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation”, J. Appl. Phys. 108 084306 (2010)